Enhanced absorption and electro-optic Pockels effect of electrostatically self-assembled CdSe quantum dots

Measurement of electro-optic coefficients of 1.3 lm self-assembled InAs=GaAs quantum dots

The electro-optic properties of 1.3 mm self-assembled InAs=GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4 10 11 m=V and 3.2 10 18 m=V, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niob...

Self-assembled Nanorings and Stressor Quantum Dots

Nanophotonic Waveguides by Self-Assembled Quantum Dots

In order to construct ultra-high density photonic integrated circuits, innovative techniques are required to circumvent the fundamental restriction set by Heisenberg’s Uncertainty Principle and the resulting diffraction limit. Traditionally, waveguides adhere to a lower bound in size roughly equal to the propagating wavelength to allow for energy confinement and minimal crosstalk. However, prog...

Kondo excitons in self-assembled quantum dots

A. O. Govorov, K. Karrai, and R. J. Warburton Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA Institute of Semiconductor Physics, 630090 Novosibirsk, Russia Center for NanoScience and Sektion Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, 80539 München, Germany Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom ~R...

Charged Excitons in Self-assembled Quantum Dots

We have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons. INTRODUCTION An exciton is the elementary excitation i...